CALBLOCK-F-012: VIS Flatband Voltage Shift¶
Parent requirement¶
P-R-NI-CAL-PV-001 in EUCL-MPIA-RD-1-001 (CalCD-B)
Observation configuration file¶
Scheduling¶
At least yearly, beginning one year into the survey.
In case of failure, repeat at next possible opportunity. Probably does not justify a survey replanning, but should then be included whenever the survey is replanned.
Time-critical¶
No
Dependencies¶
Although F-008, F-012 and F-015 remain as individual CalBlock instead of merging them into a new one, they should be scheduled one after the other, in the order F-012, F-015, and F-008.
Objective¶
Ionizing radiation causes charge accumulation in the oxide of the MOS capacitors, and with that an increase of effective voltage potential under that particular gate (flatband voltage shift).
Any shift will change the operating point at drain-to-gate interfaces, which are the charge injection structure, the serial register dump, and the output amplifiers. Due to the thin-gate oxide process used for the CCD273 the expected flatband voltage shift is only about 0.1V for an End-of-Life (EoL) Total Ionising Dose (TID) of about 2.8 Krad(Si), e.g. about 0.04V/Krad(Si).
This figure is so low that no adjustments to the voltage set points for the CCDs are foreseen, also not for the output amplifiers. Nevertheless, these are predictions and a simple monitoring procedure is required to trace possible shifts on a yearly cadence.
Observations¶
The procedure is based on the CHINJ02 test during the VIS ground calibration campaign (VGCC):
With a fixed voltage setting for IG1 and IG2, the IDL voltage is stepwise increased from the nominal setting that ensures charge injection up to and beyond the point when injection stops. The IDL voltage for this charge injection turn-on/off point increases with accumulated flatband voltage shift and is therefore a tracer for the received ionising radiation dose.
After each change to the IDL voltage some lines need to be injected and the image acquired. All data is taken with the RSU closed, and therefore no dedicated pointing is needed.
The VIS sequence VOGC8026 (Execute Charge Injection Sequence) is used for voltage shift monitoring. In particular, * the injection timing is as in nominal readout (e.g. it takes 72s to inject into the full CCD) * it allows injection for less than 2066 lines * it allows windowing for readout
IDL voltage steps:
10.5, 10.7, … step size 0.05 V …, 12.2, 12.3, 12.5
Fulfilling¶
Targets and pointing constraints¶
Pointing: No angle constraints
None
Instrument configuration¶
Instrument: Wide survey
Methodology / Uplink procedure¶
Entity: VIS
Commanding Method: None
Dither Sequence: None
Sequence and parameters for VOGC8026: * CHG_INJ_ON/_OFF: 100/0 (100 injected lines) * VSTART_INJ/VEND_INJ: 1966/2066 (Pattern stops after 100 lines) * VSTART/VEND: 1966/2086 (120 lines read) * IDL: see above * ID_WIDTH: 60 µs (Default) * ID_DELAY: 1500 µs (VGCC CONF2 with TOI_IMAGE: 1000 µs) * IG1: 4V (VGCC default) * IG2: 6V (VGCC default)
Inter-operability constraints¶
None
In-orbit duration¶
The VOGC8026 sequence has the following timings: * Flushing: 4.5s * Injection into 100 lines (CR rejection, averaging, etc.): 3.5s * Window readout 120 lines (CI image + 20 postscan): 4.1s * Compression and transfer (max.): 16.6s * Total time per IDL setting: 29s * Total number of IDL steps: 34
In-orbit Duration: 34*29s = 0.2 h
Data volume¶
The VOGC8026 sequence has the following memory usage:
120 lines per quadrant, compressed by a factor 2.5: 36.3 MB (MMU) 1.2 GB
Processing input¶
Ground Processing Input Data:
Data Description:
Processing method¶
TBW
Processing output¶
TBW
Required accuracy, constraints¶
TBW
Processing tools¶
TBW
Validation¶
TBW
Recovery¶
TBW
Quality control parameters¶
DataModel: https://gitlab.euclid-sgs.uk/
Contact person¶
VIS instrument scientist